Electron beam eb training support programs

Department of Commerce. The electron beam welder was acquired through a partnership with Cambridge Vacuum Engineering, of England.

The company attests that Penn College is the first educational institution in the U. The electron beam welder is housed in a dedicated lab in the expanded Lycoming Engines Metal Trades Center. While on site to train Penn College faculty, Thomas Nicol, senior product engineer for Cambridge Vacuum Engineering, prepares a pipe weld.

Good, assistant professor of welding. After a day and a half of instruction, Tony Slater, technical sales manager for Cambridge Vacuum Engineering, gave the group a quiz. Slater was the driving force within Cambridge Vacuum Engineering for the placement of the welder at Penn College. The expansion of the Penn College welding lab has also brought the addition of a laser welding cell, a dedicated CNC robotic welding lab, an air pressure-controlled specialized welding room, additional capabilities and space for non-destructive testing, rigging and crane operations for work with larger parts, expanded space for pipe welding, and a space for hands-on training in Occupational Safety and Health Administration standards.

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Examples of system upgrades include:. Contact a sales rep in your area by clicking here. Sciaky Global Headquarters Sciaky, Inc. Chicago, IL A Phillips Service Industries Company. Contact Us. Electron Beam Welding Technology. The Welding Institute Ltd. Made in America. Deployed Globally. This is a high-resolution Zeiss scanning electron microscope SEM. The diagram shows a simplified view of the electron column.

The scan coils are built for low noise, and so have very low bandwidth. The scan coils are controlled with a computer. Actually, the Zeiss SEM shown in the previous slide does not have two condenser lenses, and so the beam blanker has to go right inside the electron gun.

There are three big differences between a SEM and a big beam writer: speed, accuracy, and automation. The low bandwidth of SEM deflectors allows the instrument to write fine lines, but the catch is that those lines may not land where you want them. The SEM also has problems building large patterns out of small writing fields. If a pattern is built up from multiple exposure fields then the SEM will stitch those fields together poorly, compared to the dedicated system. Ease of use is a more subjective matter, but most people agree that the big systems are easier to use.

They are certainly a lot faster, especially since they include automated calibration routines. Because of the low bandwidth deflectors, SEM writers often require patterns to include overlaps, so that wires will not contain accidental gaps.

Also, users often find it necessary to specify the order in which shapes are written, to minimize hysteresis effects. Is that something you want to think about?

The table above states that the kV system will require roughly 3 times the dose of electrons, but the high-voltage electron source is also three times brighter. In other words, lower resist sensitivity is offset by higher current. Planning first, then design CAD. When the gate is charged positively, electrons are attracted toward it.

Or right to left - whatever. When the gate is not charged then the electrons under the gate dissipate and the transistor turns off. This is a typical device to build with electron-beam lithography, and it makes a nice example of how to organize your computer-aided design CAD.

The various parts of a transistor are built up using a number of lithography steps, as shown above. Subsequent layers in the fabrication process follow, each including resist coating, exposure, development, and pattern transfer.

The pattern exposed in resist must be transferred somehow to the substrate. You could etch the substrate in a plasma of reactive gas e. Other pattern transfer techniques include implantation and polishing.

This is a common technique in research, because it is so simple, but liftoff is not usually used in production since there are more reliable and less messy ways of patterning wires. Acetone is a common solvent used for dissolving resist, and it becomes more effective if you heat it.

But it also becomes explosive if you heat it! Instead, use warm NMP, which can be heated up to C without becoming dangerously explosive. If you heat NMP above C it becomes acidic. In electron-beam lithography you have a limited selection of resists. There are more complicated chemically amplified e-beam resists, but they are way too fussy and not worth the effort. The negative resist HSQ contains monomers which are crosslinked by the electron beam.

The unexposed regions wash away in developer. UVN and ma-N are two other negative resists, but are far more difficult to use. For no apparent reason, ma-N negative resist has become more popular than UVN. Both have at best 50 nm resolution, and both use chemical amplification to induce crosslinking.

HSQ has the best resolution of any e-beam resist, in the range below 8 nm. A large undercut is handy for doing metal liftoff. Pick your developer. IPA-water is better in every way: higher resolution, less residue, less swelling, higher aspect ratio, lower toxicity, and lower cost. ZEP can be developed in a wide assortment of chemicals, depending on your needs.

There is a tradeoff between sensitivity speed and resolution. If you need to expose large features quickly, then you can use hexyl acetate as the developer. But most people use cold xylene to develop ZEP, since they need the best resolution.

When developing HSQ, there is a tradeoff between resolution and stress. High doses shrink the resist more than low doses, leading to more stress in the resist film. For more practical applications we use a weaker developer. If PMMA or ZEP is used as an etch mask, then you can remove the remaining resist simply by programming an oxygen etch step in the same plasma etcher.

Just hit it with an oxygen plasma after say chlorine or fluorine. Note that a low-bias barrel etcher will not do. You need a bit of bias to break up the polymer. Removing HSQ can be difficult, since it does not etch at all in oxygen.

HSQ is a low-density silicon oxide, and so it will etch readily in fluorine plasmas or in hydrofluoric acid. If your device is incompatible with those etchants, then you could put a sacrificial polymer layer under the HSQ. Our colleagues to the north seem to think that PMMA cannot be used as an etch mask. They are badly misinformed! PMMA and ZEP are actually very similar polymers, and so you would not expect them to be terribly different as etch masks.

This is a classic picture from Ernst Kratschmer showing how large features can be fully exposed while small features are underexposed.